Table 1. Characteristics of samples obtained by different diffusion methods and anomalous Hall
effect in silicon
Method
diffusion
No
The
resulting
samples
Type
,
Ohm
c
m
Usual R
X
,
cm
3
/Cl
Anomalous
Mn I R
,
cm
3
/Cl
μ,
cm
2
/V
s
I party
1
Si р
2
10
2
4.
26∙10
4
-
213
2
Si р
3
10
2
7.
5∙10
4
2,5
10
4
167
3
Si р
8
10
2
2∙10
5
1.28
10
5
90
4
Si р
8
10
3
2∙10
6
1.49
10
6
63
5
Si р
1.2
10
4
3∙10
6
2.06
10
6
78
6
Si р
2
10
4
5∙10
6
3.4
10
6
80
7
Si р
4
10
4
10
7
7
10
6
75
8
Si р
1.2
10
5
3∙10
7
1.11
10
7
158
9
Si р
2
10
5
7.5
10
7
-
250
10
Si n
3
10
3
3.64
10
6
-
1214
11
Si n
5
10
4
6
10
7
-
1192
12
Si n
1.2
10
5
1.4
10
8
-
1160
II party
1
Si р
3
10
2
7.5
10
4
-
240
2
Si р
6
10
3
1.5
10
6
-
268
3
Si р
7
10
4
1.75
10
7
-
236
4
Si n
4.5
10
3
5.4
10
7
-
1240
5
Si n
6
10
4
7.2
10
7
-
1208
Magnetoresistance (MR) in p-Si samples with magnetic [Mn]4 nanoclusters was
investigated at room temperature in transverse (B I) direction of magnetic field. The
magnetic field strength varied in the range B=0÷2 Tl, i.e. the condition of weak magnetic
field was fulfilled. The results of magnetoresistance in silicon with magnetic nanoclusters
of manganese atoms are shown in Fig. 4.
As can be seen from the figure, with increasing concentration of nanoclusters, the
negative magnetoresistance (NMR) value increases significantly. In the samples with
nanoclusters concentration N=1015 cm-3 at room temperature, at E=100 V/cm a giant
NMR Δρ/ρ~300 % is obtained, and magnetic field sensitivity is α=150 %/Tl. These results,
not only clearly demonstrate that the occurrence of NMR and its nature in such samples is
directly related to the presence of nanoclusters of manganese atoms in the lattice, but also
to the possibility of controlling the value of NMR in a wide range by changing the
concentration of nanoclusters.
It was found that with increasing concentration of nanoclusters
in the range of 2·1013 ÷
1015 cm-
3, under the same experimental conditions, the value of OMC increases by 8÷10
times, and the sensitivity of the magnetic field increases from α=28 %/Tl to α=150 %/Tl.
E3S Web of Conferences
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CONMECHYDRO - 2023 https://doi.org/10.1051/e3sconf/202340105094
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Fig. 4. MR dependence on magnetic field in samples with different concentration of magnetic
nanoclusters at T=300 K, E=100 V/cm: 1
–
N(Mn)4 = 2·1013 cm
-3, 2
–
N(Mn)4=2·1014 c
m-3, 3
–
N(Mn)4 = 5·1014 cm
-3, 4
–
N(Mn)4 =1015 cm
-3
4 Conclusions To summarize the results of the research presented in this paper, the following conclusions
can be drawn from the individual results, which have an important value in their own right:
1. The technology of formation of nanoclusters of impurity manganese atoms with
controlled structure and properties in the silicon lattice has been developed, which is one of
the most actual and perspective solved problems of modern nanoelectronics, as the creation
of magnetic nanoclusters - magnetic quantum dots in the silicon lattice not only allows to
manage the fundamental parameters of silicon, its magnetic properties, but also reveals a
number of new physical phenomena still unknown to us.
2. The electrophysical and magnetic properties of silicon with nanoclusters of
manganese atoms are investigated and anomalously high NMR ( ) is found at room
temperature.
3. The regularity of NMR value change from nanoclusters concentration and
electrophysical parameters of samples with nanoclusters were determined. It is shown that
with increasing concentration of nanoclusters NMR value significantly increases, and for
detection of maximum NMR it is necessary to use silicon of p-
type with ρ=(3÷10)·103
Ohm∙cm at room temperature.
E3S Web of Conferences
401
, 05094 (2023)
CONMECHYDRO - 2023 https://doi.org/10.1051/e3sconf/202340105094
7