Negative magnetoresistance in silicon doped with manganese

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Negative magnetoresistance in silicon doped 
with manganese 
N. F.
Zikrillaev, 
Kh. M.
Iliev
*
, 
G. Kh.
Mavlonov, 
S. B.
Isamov, and 
M. Kh.
Madjitov 
Tashkent State Technical University, Tashkent, Uzbekistan 
Abstract.
 
Based on the developed low-temperature step-by-step diffusion 
of impurity manganese atoms, magnetic nanoclusters of manganese atoms 
were formed in the crystal lattice of silicon with controllable concentration, 
with specified and reproducible electrophysical parameters. With the help 
of electron spin resonance, it was proved experimentally that magnetic 
nanoclusters are formed in p-Si silicon and consist of four 
positively charged manganese atoms which are situated in the nearest 
equivalent inter-nodes around the negatively charged boron atom. Based 
on the study of electrophysical properties of the material obtained it is 
shown that in such materials an anomalous Hall effect is observed. 
Magnetoresistance in silicon p-Si with magnetic nanoclusters at 
room temperature was studied and a giant negative magnetoresistance 
(NMR) 
Δρ
/
ρ

300 %, was found, it was shown that with increasing 
concentration of nanoclusters, NMR value essentially rate.
1 Introduction 
The development of technology for obtaining new magnetic semiconductors and the study 
of their properties allows not only to further develop the scientific areas of spintronics, 
photomagnetism, magneto-optics and discover new physical phenomena associated with 
the magnetic properties of semiconductors, but also to significantly expand the scope of 
modern electronics, as well as to better understand what is happening in physical processes 
[1-7].
At the same time, the formation and study of magnetic nanoclusters in a crystalline 
silicon matrix without disturbing its phase and chemical composition is of particular 
scientific and practical interest. This interest is important because, on the one hand, the base 
material used, silicon, is the main material for modern electronics, and this significantly 
speeds up the practical application of the results obtained based on this material. On the 
other hand, the creation of magnetic nanoclusters with controlled parameters and 
concentration makes it possible to reveal new yet unexplored facets of the magnetic 
properties of silicon with nanostructures and the possibility of their use in the development 
and creation of a fundamentally new generation of electromagnetic and photomagnetic 
devices.
*Corresponding author: 
[e-mail]

E3S Web of Conferences 

401
, 05094 (2023)
CONMECHYDRO - 2023
https://doi.org/10.1051/e3sconf/202340105094
© The Authors, published by EDP Sciences. This is an open access article distributed under the terms of the Creative
Commons Attribution License 4.0 (https://creativecommons.org/licenses/by/4.0/). 

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