Optical phenomena in semiconductors

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British Journal of Global Ecology and Sustainable Development
Volume-16, May, 2023 
ISSN (E): 
2754-9291 
85 
OPTICAL PHENOMENA IN SEMICONDUCTORS
 
Kholmirzayev Jasur Yuldashbayevich 
Andijan Machine Building Institute, Andijan, Uzbekistan 
 
Abstract:
The detailed characteristics of the basic galvanic and thermal effects are given. The 
quantitative forms of thermoelectric emission current are determined by the fact that 
the current is relative to the temperature.
 
 
Keywords:
Semiconductor, galvanic, thermomagnetic, electricity, magnet, 
deformation, heat, field, kinetic, current carriers, concentration, mobility, zonal 
structure, prohibited zone, effective mass. 
 
Introduction 
Galvanic and thermomagnetic phenomena in semiconductors are characterized by 
changes in the properties of the sample under the influence of external electric, 
magnetic, deformation and heat fields. 
The practical significance of such kinetic phenomena is significant because they 
determine the concentration and mobility of the carriers, physical magnifications 
describing the swelling mechanisms, the parameters of the semiconductor zonation 
structure, for example, the width of the restricted zone, the effective mass of the current 
carriers. 
Galvanic and thermal effects are widely used in techniques. Magnetic field detectors, 
detectors for Hall and magnetic effect, electric signal transducers, Nernst-Ettingsungen 
thermal energy sensors, and Ettingsungen-based refrigerators and thermostatic devices 
in several spheres of our life can be used.
Thus, extensive study of galvanic and thermomagnetic and such types of kinetic 
phenomena does not destroy the content of their mechanisms, taking into consideration 
the quantum areas or anthropology. 
Therefore, we examine such phenomenologies in the beginning, and then at least, in the 
classical approximation.