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An Investigation of Semiconductor Structures With Current Transient Spectroscopy
In this study “Photo-induced Current Transient Spectroscopy-PICTS” technique has been used to investigate deep levels of undoped and modulation doped Ga1-yInyNxAs1-x / GaAs dilute nitride semiconductors. The temperature dependence of the current decay after the excitation pulses were studied and the activation energies (Ea) and capture cross sections () of the deep levels were determined. Moreover, in order to determine contact quality I-V characterization of these samples has been achieved.
The activation energies and capture cross sections of undoped annealed and as-grown Single Quantum Well (SQW) and Multi Quantum Wells (MQWs) were investigated and these results were compared among each other. Effects of thermal annealing on the samples were also investigated. Results obtain an the modulation doped sample was only as-grown sample, since there was no annealed sample available. Therefore, only the activation energies and capture cross sections of this sample were investigated. Obtained results were discussed and compared with those in the literature.
Bülent COMBA
Danışman : Doç.Dr. Ayşe EROL
Anabilim Dalı : Fizik
Programı : Katıhal Fiziği
Mezuniyet Yılı : 2009
Tez Savunma Jürisi : Doç. Dr. Ayşe EROL(Danışman)
: Prof. Dr. Çetin ARIKAN
: Prof. Dr. Gönül BAŞAR
: Prof. Dr. Ayşen ÖZEL
: Doç. Dr. Esra ÖZKAN ZAYİM
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