Tez özetleri Astronomi ve Uzay Bilimleri Anabilim Dalı

MOS Parameter Extraction and Optimization with Genetic Algorithm

Extracting an optimal set of parameter values for a MOS device is great importance in contemporary technology is a complex problem. Traditional methods of parameter extraction can produce far from optimal solutions because of the presence of local optimum in the solution space. Genetic algorithms are well suited for finding near optimal solutions in irregular parameter spaces.

In this study, MOS Parameters extracted and optimized with genetic algorithm. First of all, historical development of the MOS models and operation basis of MOS transistors are introduced. BSIM3V3 is explained in details. Thereinafter historical development, properties and parameters of genetic algorithms are explained.

In the following section, applied strategies of extracting BSIM3V3 MOSFET model parameters are defined. After defined the parameter extraction with genetic algorithm The SPICE simulations are performed using extracted parameters. The results of experimental studies for parameter extraction firstly obtained 0.35μm fabricated by C35 process and then 0.7μm fabricated test transistors which produced in TUBITAK Laboratories were used.

Extracted parameters characteristic data results have been compared with measurement results in the last section. Different values of parameters of genetic algorithm, such as population size, crossover rate ,and generation size are compared by different tests.

ÖZER Emre
Danışman : Prof. Dr. Aydın AKAN

Anabilim Dalı : Elektrik-Elektronik Mühendisliği

Mezuniyet Yılı : 2008

Tez Savunma Jürisi : Prof. Dr. Aydın AKAN

Prof. Dr. Sıddık YARMAN

Prof. Dr. Hakan Ali ÇIRPAN

Prof. Dr. Ayten KUNTMAN

Prof. Dr. Ahmet SERTBAŞ