Kokanduni uz

Results and discussion: 
On fig. 1 shows the dark CVC of the fabricated structure. An 
analysis of the direct branch of the CVC showed that in the voltage range from 0 to 0.2 V, the 
diffusion mode of current transfer is observed, and this segment is well approximated by an 
exponential dependence of the form [3]: 
ckT
qV
o
e
I
I
=
(1) 
where q is the elementary charge; V is the electrical voltage applied to the structure; k is 
the Boltzmann constant; T is the absolute temperature. Dependence (1) is typical for a "long" 
p-n-diode, in which d/Ln > 1, here d is the base thickness, Lp is the diffusion length of 
minority charge carriers in the base region of the structure [3]. 
The value of "c" in the exponent can be calculated directly from the experimental points 
of the exponential section of the CVC curves using the relation: 
)
/
ln(
1
2
1
2
I
I
V
V
kT
q
c
−

=
(2) 
The value of the indicator calculated from relation (2) was c=3.16 
Behind the exponential section in the voltage range from 0.2 to 1 V there is an ohmic 
dependence of the current - I =A-V, where A=1.03
∙
10-4 A/V. The appearance of an ohmic 
region can be explained by modulation of the space charge by sticking centers in a high-
resistance base, the role of which is played by the epitaxial layer of the n-(Si
2
)
1-x
(GaN)
x
solid 
solution. In the voltage range from 1.2 to 2.5 V, there is a power-law dependence of the 
current - I =A-
Vα, with the power value α = 2
.7. 
Fig.1. Direct branch of the current-voltage characteristic of the p-Si
–
n-(Si
2
)
1-x
(GaN)
x
structure in logarithmic scales. 

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