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Such a change in the dependence may be due to the fact that, at voltages above 1.2 V, the 
injected nonequilibrium carriers completely fill the attachment centers and, subsequently, the 
space charge is modulated by deep recombination centers, which are formed by defect-
impurity complexes of the vacancy + impurity type in the base of the structure, and the drift 
mode sets in. dielectric relaxation of the space charge. Moreover, in this case it is necessary to 
take into account the inertia of the electron exchange within the recombination complex. In 
this case, a power-law dependence is observed with a degree close to the cubic law. In this 
case, a more complex dependence of the type [4] is observed. 
J
D
V
−
+
=
J
B
A
(3) 
where A, B and D are constants depending on the properties of the material. In [4] it is 
shown that the use of computer simulation for specific materials, expression (3) allows 
obtaining different degrees of α depending on I =A
-V
α
, and the value of the α index changes 
with the change in the current value. 
Thus, the possibility of obtaining an epitaxial layer of a substitutional solid solution 
(Si
2
)
1-x
(GaN)x on Si substrates from the liquid phase has been shown. By studying the CVC, it 
was found that in the epitaxial layers of the solid solution (Si
2
)
1-x
(GaN)
x
, apparently, defect-
impurity complexes are formed, and it can be assumed that in such solid solutions the 
recombination rate of nonequilibrium charge carriers at low levels of excitation is determined 
by simple local centers, but with an increase in the excitation level, by simple local centers and 
defect-impurity complexes simultaneously. With a further increase in the excitation level, the 
contribution of impurity complexes in the recombination process can become decisive. 
Conclusion: 
Solid solutions of the Mn1-xTmxSe (0
≤
x
≤
0.7) system with the cubic 
structure of the space group Fm3
̅
m were obtained using the solid-phase synthesis technique. 
The crystal structure of solid solutions of the M
n1-x
Tm
x
Se system has been studied by X-ray 
phase analysis. An increase in the concentration of Tm cations in M
n1-x
Tm
x
Se solid solutions 
leads to an increase in the parameter a form 0.547 nm for the Mn
0.975
Tm
0.025
Se composition to 
0.566 nm for the Mn
0.3
Tm
0.7
Se composition.
 
Thin films of Thin films of M
n1-x
Tm
x
Se solid solutions were synthesized using the flash 
method on standard substrates of optically transparent glass. It has been established that the 
film thicknesses are in the range of values: from 0.8 µm to 3.2 µm solid solutions were 
synthesized using the flash method on standard substrates of optically transparent glass. It 
has been established that the film thickne
sses are in the range of values: from 0.8 µm to 3.2 
µm.
X-ray phase analysis of thin films of Mn1-xTmxSe solid solutions was performed at room 
temperature in CuKα radiation. It
has been established that M
n1-x
Tm
x
Se (x=0.05; 0.1; 0.3) films 
have a cubic system of the NaCl type, space group Fm3
̅
m. The composition of M
n1-x
Tm
x
Se thin 
films corresponds to the chemical composition of the initial powders. 
This work was supported by the Belarusian Republican and Russian Foundations for 
Basic Research (project no. T20R-052).