Kokanduni uz

Keywords:
solid solutions, Si
2
, GaN
x
, single crystal, liquid phase epitaxy from tin 
solution, hydrogen environment, voltage characteristics. 
Introduction: 
The development of semiconductor instrumentation is inextricably linked 
with the success of the technology for obtaining traditional semiconductor materials such as 
Ge and Si. However, these materials do not meet modern requirements, in particular, in terms 
of the spectral range of electromagnetic radiation, in terms of speed and temperature range of 
operation of optoelectronic devices based on them. Semiconductor binary compounds III-V, II-
VI and their solid solutions with elemental semiconductors have come to replace traditional 
materials. Among binary compounds, gallium nitride (GaN) is one of the attractive materials. 
Light-emitting diodes, violet injection lasers, ultraviolet detectors, and high-temperature 
transistors have been developed on its basis [1, 2]. However, GaN is an expensive material; 
large-scale use of bulk elements based on it is not cost-effective. Therefore, at present, a 
significant factor hindering progress in this field is the lack of an available technology for 
obtaining GaN films with a low (less than 10
7
cm
–
2
) dislocation density on cheap conductive 
substrates. In this regard, the preparation of thin GaN layers of device quality on accessible 
substrates, such as Si, is one of the urgent problems of modern gallium nitride micro- and 
optoelectronics. In this aspect, the most important and still unsolved problem is to overcome 
the large difference in the lattice constant and thermal expansion coefficient of single-crystal 
Si and GaN, in addition, the GaN lattice is hexagonal, and Si is cubic. 
This paper presents the results of a study on the growth of substitutional solid solutions 
(Si
2
)
1-x
(GaN)
x
on single-crystal Si (111) substrates by liquid-phase epitaxy from a limited 
volume of a tin solution-melt in a hydrogen medium and the current-voltage characteristic 
(CVC) of p-Si-n-(Si
2
)
1-x
(GaN)
x
structures.