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Si-GaN for conference corrected


Features of liquid-phase epitaxy of new complex solutions (Si2)1-x(GaN)x, their luminescent and electrical properties

Amin Saidov
Physical–Technical Institute
Uzbekistan Academy of Sciences
Tashkent, Uzbekistan
orcid.org/0000-0002-9124-6430

Shukrullo Usmonov


Physical–Technical Institute
Uzbekistan Academy of Sciences
Tashkent, Uzbekistan
sh_usmonov@rambler.ru

Dadajon Saparov


Physical–Technical Institute
Uzbekistan Academy of Sciences
Tashkent, Uzbekistan
orcid.org/0000-0002-9282-9048
Tolmas Ishniyazov
Physical–Technical Institute
Uzbekistan Academy of Sciences
Tashkent, Uzbekistan
tolmas.14@mail.ru

Kurban Gaimnazarov


Gulistan State University, Sirdarya, Uzbekistan.
kgaymnazarov@mail.ru

Abstract: The possibility of growing an epitaxial film of a solid solution of molecular substitution (Si2)1-x(GaN)x on Si substrates, which can be used as a buffer layer for growing epitaxial GaN films on Si substrates, is studied. The conditions for the formation of a solid solution of molecular substitution (Si2)1-x(GaN)x are analyzed on the basis of the rules of generalized moments. It is shown that the photoluminescence spectrum of the (Si2)1-x(GaN)x solid solution has a wide band covering the visible range of the emission spectrum from 400 to 650 nm with an emission maximum at λmax = 438 nm, which corresponds to the photon energy Eph = 2.83 eV. The electronic energy level of atoms of Si2 molecules located at Ei = 1.66 eV below the bottom of the conduction band of the solid solution was revealed. The results of the current-voltage characteristic studies have been shown that the current transfer in the p-Si–n-(Si2)1-x(GaN)x structure is stable in the temperature range 300–360 K. It was shown that Si2 in the solid solution (Si2)1-x(GaN)x has a local energy band with a width of 0.27 eV.

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