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Materials and methods: 
Solid solutions (Si
2
)
1-x
(GaN)x were grown on KDB-0.01 single-
crystal Si washers with a diameter of 20 mm, a thickness of 400 μm, and crystallographic 
orientation (111). During growth, the parameters of the technological process of liquid-phase 
epitaxy were varied: the composition of the solution-melt, the temperature of the beginning 
and end of crystallization, the rate of forced cooling, and the thickness of the solution-melt 
(the distance between horizontally located Si substrates). The composition of the Sn-Si-GaN 
melt solution was determined based on the results of preliminary experiments and literature 
data [3, 4] Sn - 97.78 wt.%, Si - 0.97 wt.%, GaN - 1.25 wt.%. Under optimal conditions, the 
growth temperature range was 950
–
850
0
С, the melt solution cooling rate was 1 deg/min, and 
the distance between horizontally located substrates was 1 mm. With the chosen parameters 
of the technological process, the entire surface of the substrate was covered with a continuous 

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homogeneous epitaxial film. The film surface was smooth-mirror; the thickness of the 
epi
taxial layer was the same over the entire surface and amounted to 15 μm. Specially 
undoped films had an electronic type of conductivity. 
To study the mechanisms of current transfer in the p-Si
–
n-(Si
2
)
1-x
(GaN)x 
heterostructure, ohmic contacts were made to them, by vacuum deposition of silver - solid on 
the side of the substrate and quadrangular with an area of 4 mm
2
on the side of the epitaxial 
layer. It should be noted that during the growth of n-(Si
2
)
1-x
(ZnSe)
x
on a Si substrate of p-type 
conductivity, a diode structure is formed in the form of R
om
-p-n-R
Om
, where R
Om
is a metal 
contact with an ohmic transition.