ELECTROSTATIC DOPING OF SRTIO
3
Azar EYVAZOV
Cornell University
azereyvazov88@gmail.com
USA
In this project, we have fabricated field effect transistors on the surface of atomically flat, single crystal SrTiO
3
aligned
in (100) direction. These transistors feature bilayer gate insulator; 250 nm Ta
2
O
5
on top 50nm parylene-C. Parylene-C helps
preserve electron channel, while bilayer structure allows us to accumulate greater carrier density for same applied gate
voltage and reduces leak current through the insulator significantly. With this bilayer gate insulator, we have reported field-
effect mobility as high as μ
FE
=10cm
2
/Vs at carrier density n=8×10
12
cm
-2
.
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