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II INTERNATIONAL SCIENTIFIC CONFERENCE OF YOUNG RESEARCHERS 

76 

 Qafqaz University                         

          18-19 April 2014, Baku, Azerbaijan 

In these transistors, we have observed significant charge heterogeneity as gate voltage and source-drain bias voltage 

was changed. Current-voltage characteristics of these devices show the so called S-shaped as gate voltage is changed and 

shape of the “S-shape” depends on how big gate voltage or source-drain bias is. We associate these negative resistance 

characteristics with charge heterogeneity and formation of current filaments. A theoretical model built upon this idea agrees 

well with experimental data. 

 

A.  B. Eyvazov, I. H. Inoue, P. Stoliar, M. J. Rozenberg& C. Panagopoulos, Scientific Reports 3, 1721 (24 April 

2013). 

 

This work was supported by the Japan-Singapore Joint-Research Program, the Japan Society for the Promotion of 

Science (JSPS) and the National Research Foundation, Singapore through Competitive Research Programme (CRP 

Award No. NRF-CRP-4-2008-04). I. H. I. was partly supported by Grants-in-Aid for Scientific Research (category A, 

grant number 24244062).